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| savantic semiconductor product specification silicon npn power transistors 2SC3551 d escription with to-3pn package high voltage ,high speed switching high reliability applications switching regulators ultrasonic generators high frequency inverters general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 10 v i c collector current 5 a i b base current 3 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 1.5 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3551 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 800 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 900 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 10 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.4a 1.0 v v besat base-emitter saturation voltage i c =2a ;i b =0.4a 1.5 v i cbo collector cut-off current v cb =900v i e =0 1.0 ma i ebo emitter cut-off current v eb =10v; i c =0 1.0 ma h fe dc current gain i c =2a ; v ce =5v 10 switching times t on turn-on time 1.0 s t s storage time 4.0 s t f fall time i c =3a; r l =100 b i b1 =0.6a; i b2 =-1.2a 0.8 s savantic semiconductor product specification 3 silicon npn power transistors 2SC3551 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) savantic semiconductor product specification 4 silicon npn power transistors 2SC3551 |
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